PART |
Description |
Maker |
IBM11M32735C |
32M x 72 DRAM Module(32M x 72动态RAM模块) 32M × 72配置内存2M × 72配置动态内存模块)
|
International Business Machines, Corp.
|
2-1437720-7 |
T01 CABLE CONNECTION MALE-FEMALE PLUG 4 POS. 1-32m T01 VERBINDUNGSKABEL STIFT-BUCHSE 4 POL. 1-32m
|
Tyco Electronics
|
KMM374S3323T |
32Mx72 SDRAM DIMM(32M x 72 动RAM模块) 32Mx72 SDRAM的内存(32M × 72配置动态内存模块)
|
Samsung Semiconductor Co., Ltd.
|
S70WS512N00BAWA30 S70WS512N000BAWA33 |
32M X 16 FLASH 1.8V PROM, 80 ns, PBGA84 Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory
|
SPANSION LLC
|
MT46V32M16P-5BC MT46V32M16BN-6C |
32M X 16 DDR DRAM, 0.7 ns, PDSO66 0.400 INCH, LEAD FREE, PLASTIC, TSOP-66 32M X 16 DDR DRAM, 0.7 ns, PBGA60
|
Micron Technology, Inc.
|
HY27US08561A HY27US16561A HY27SS08561A HY27SS16561 |
256Mbit (32Mx8bit / 16Mx16bit) NAND Flash 32M X 8 FLASH 1.8V PROM, 35 ns, PBGA63 9 X 11 MM, 1 MM HEIGHT, LEAD FREE, FBGA-63 32M X 8 FLASH 1.8V PROM, 35 ns, PDSO48 12 X 20 MM, 1.20 MM HEIGHT, TSOP1-48 32M X 8 FLASH 1.8V PROM, 35 ns, PBGA63 9 X 11 MM, 1 MM HEIGHT, FBGA-63 32M X 8 FLASH 1.8V PROM, 35 ns, PDSO48 12 X 17 MM, 0.65 MM HEIGHT, LEAD FREE, USOP1-48 32M X 8 FLASH 1.8V PROM, 35 ns, PDSO48 12 X 17 MM, 0.65 MM HEIGHT, USOP1-48 16M X 16 FLASH 1.8V PROM, 35 ns, PDSO48 12 X 17 MM, 0.65 MM HEIGHT, USOP1-48 32M X 8 FLASH 3.3V PROM, 30 ns, PBGA63 16M X 16 FLASH 1.8V PROM, 35 ns, PBGA63
|
Hynix Semiconductor, Inc. HYNIX SEMICONDUCTOR INC
|
KM23V32000CT KM23V32000CET |
32M-Bit (4Mx8 /2Mx16) CMOS Mask ROM(32M(4Mx8 /2Mx16) CMOS掩膜ROM) 32兆位Mx8 / 2Mx16)的CMOS掩模ROM2兆位Mx8 / 2Mx16)的CMOS掩膜光盘
|
SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
|
MB84VD22181EH-90-PBS MB84VD22182EH-90-PBS MB84VD22 |
32M (x 8/x16) FLASH MEMORY & 4M (x 8/x16) STATIC RAM 32M的(x 8/x16)闪 32M (x 8/x16) FLASH MEMORY & 4M (x 8/x16) STATIC RAM SPECIALTY MEMORY CIRCUIT, PBGA71 TRIMMER, 15 TURN 20K CONN HEADER 12POS DL PCB 30GOLD 32M (x 8/x16) FLASH MEMORY & 4M (x 8/x16) STATIC RAM
|
FUJITSU LTD Fujitsu, Ltd. Fujitsu Limited Fujitsu Component Limited.
|
K4M511633C-RBF1H K4M511633C-RBF75 K4M511633C-RBL K |
32M X 16 SYNCHRONOUS DRAM, 5.4 ns, PBGA54 32M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54 8M X 16BIT X 4 BANKS MOBILE SDRAM IN 54FBGA
|
Samsung semiconductor
|
K4S51153PF-YF K4S51153PF K4S51153PF-YPF1L K4S51153 |
32M X 16 SYNCHRONOUS DRAM, 6 ns, PBGA54 FBGA-54 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA 8米16 × 4银行4FBGA移动SDRAM 32M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54 FBGA-54 From old datasheet system
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
|
HYS64V16300GU HYS72V16300GU HYS64V32220GU HYS72V32 |
3.3 V 16M × 64-Bit 1 Bank SDRAM Module(3.3 V 16M × 64-1同步动态RAM模块) 3.3 V 16M × 72-Bit 1 Bank SDRAM Module(3.3 V 16M × 72-1同步动态RAM模块) 3.3 V 32M × 64-Bit 1 Bank SDRAM Module(3.3 V 32M × 64-1同步动态RAM模块) 3.3 V 32M × 72-Bit 1 Bank SDRAM Module(3.3 V 32M × 72-1同步动态RAM模块) 32M X 72 SYNCHRONOUS DRAM MODULE, 5.4 ns, DMA168
|
SIEMENS AG INFINEON TECHNOLOGIES AG
|